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Published in 2017 at "Electronics Letters"
DOI: 10.1049/el.2017.0447
Abstract: For the first time, a rare-earth-doped GaN nanocolumn light-emitting diode is fabricated on an n-type (111) Si substrate, grown by rf-plasma-assisted molecular beam epitaxy. The nanocolumn structure remained in the n-GaN and europium-doped GaN active…
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Keywords:
nanocolumn light;
gan nanocolumn;
plasma assisted;
light emitting ... See more keywords