Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer-Scale Fabrication.
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DOI: 10.1002/advs.202206385
Abstract: Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high-frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub-100 nm air channels. Despite these advantages,… read more here.
Keywords: air; gan nanoscale; wafer; nanoscale air ... See more keywords