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Published in 2020 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2019.109337
Abstract: Abstract Two-dimensional GaN nanosheets have emerged as a promising candidate material for the application of low-dimensional optoelectronic devices, but their fundamental electronic structure and intrinsic carrier mobility are extremely sensitive to the phase structure and…
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Keywords:
carrier mobilities;
surface;
two dimensional;
gan nanosheets ... See more keywords