Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.10.032
Abstract: Abstract Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL)… read more here.
Keywords: gan nanostructures; selective area; area growth; pre orienting ... See more keywords
Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c04220
Abstract: Tuning the surface structure of the photoelectrode provides one of the most effective ways to address the critical challenges in artificial photosynthesis, such as efficiency, stability, and product selectivity, for which gallium nitride (GaN) nanowires… read more here.
Keywords: nanostructures photoelectrochemical; effects gan; photoelectrochemical reaction; gan nanostructures ... See more keywords
High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures.
Sign Up to like & getrecommendations! Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b03087
Abstract: Photoelectrochemical water splitting is a clean and environmentally friendly method for solar hydrogen generation. Its practical application, however, has been limited by the poor stability of semiconductor photoelectrodes. In this work, we demonstrate the use… read more here.
Keywords: high efficiency; efficiency; gan nanostructures; efficiency photocathode ... See more keywords