LAUSR

Research on quantum efficiency and photoemission characteristics of exponential-doping GaN nanowire photocathode

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0 Published in 2017 at "Journal of Materials Science"

DOI: 10.1007/s10853-017-1394-x

Abstract: Aimed at improving the actual photoemission performance of nanowire photocathode, an axial exponential-doping GaN nanowire photocathode is proposed. Based on two-dimensional continuity equation and finite difference method, the quantum efficiency of this exponential-doping GaN nanowire… read more here.

Keywords: photocathode; quantum efficiency; gan nanowire; nanowire photocathode ... See more keywords

Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure

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1 Published in 2019 at "Nano Research"

DOI: 10.1007/s12274-019-2292-0

Abstract: AbstractUsing capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a… read more here.

Keywords: surface core; gan nanowire; noise; nanowire gate ... See more keywords

A first principle study on systematic stability and electronic properties of GaN nanowire surface with Cs/Li/NF3 co-adsorption

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1 Published in 2019 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.01.279

Abstract: Abstract In this study, the systematic stability and surface electronic properties of (100) surface GaN nanowire are investigated through first principle calculations based on density functional theory. Results suggest that Li atoms insertion on the… read more here.

Keywords: gan nanowire; systematic stability; study systematic; surface ... See more keywords

Hydrogen gas sensing mechanism of Pt-decorated GaN nanowire surface: A perspective from first principle study

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1 Published in 2020 at "Solid State Ionics"

DOI: 10.1016/j.ssi.2020.115327

Abstract: Abstract The hydrogen gas sensing mechanism of GaN nanowire surface, especially Pt-decorated surface are investigated utilizing first principle calculations. Various models with respect to the redox process on GaN nanowire and Pt-decorated surfaces are built.… read more here.

Keywords: gan nanowire; surface; nanowire surface; sensing mechanism ... See more keywords

Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel

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1 Published in 2018 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2018.2824985

Abstract: This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and… read more here.

Keywords: gan channel; normally vertical; gan nanowire; nanowire mosfets ... See more keywords

GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon

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1 Published in 2020 at "Materials"

DOI: 10.3390/ma13214755

Abstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination… read more here.

Keywords: array; gan p3ht; gan nanowire; nanowire array ... See more keywords

Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

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2 Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13101629

Abstract: For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made… read more here.

Keywords: nanowire wrap; carrier transport; gan nanowire; temperature ... See more keywords