Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Optical Materials"
DOI: 10.1002/adom.201902162
Abstract: Composite nanostructures with plasmonic metals can introduce optical resonances and enhance optoelectronic performance significantly. In this work, novel lateral porous GaN/Ag nanowires (NWs) composite nanostructure‐based UV photodetectors were designed and fabricated, and the detectivity is… read more here.
Keywords: response; gan nanowires; lateral porous; composite nanostructure ... See more keywords
Facile growth of high aspect ratio c-axis GaN nanowires and their application as flexible p-n NiO/GaN piezoelectric nanogenerators
Sign Up to like & getrecommendations! Published in 2018 at "Acta Materialia"
DOI: 10.1016/j.actamat.2018.09.030
Abstract: Abstract Piezoelectric nanogenerators (PNGs) have attracted great interest as energy sources to power-up smart clothing, micro/nano systems, and portable electronic gadgets. Due to non-centrosymmetric crystal structure, bio-compatibility, and mechanical robustness of GaN, it is a… read more here.
Keywords: piezoelectric nanogenerators; aspect ratio; gan nanowires; gan ... See more keywords
Improvement in the performance of CIGS solar cells by introducing GaN nanowires on the absorber layer
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.11.297
Abstract: Abstract Cu(In, Ga) Se2 (CIGS) thin-film solar cells are currently the fastest growing photovoltaic technology due to the higher performance ratio and lower energy payback time compared to the silicon, and good stability. Despite of… read more here.
Keywords: gan nanowires; solar cells; 300 400; improvement performance ... See more keywords
Selective area growth of GaN nanowires on Si(1 1 1) substrate with Ti masks by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125181
Abstract: Abstract We present results on the selective area growth (SAG) of Gallium Nitride (GaN) nanowires on Si substrate without any buffer layer by radio frequency plasma-assisted molecular beam epitaxy. Full selectivity was achieved with a… read more here.
Keywords: growth; gan nanowires; molecular beam; nanowires substrate ... See more keywords
Piezoelectric and pyroelectric properties of intrinsic GaN nanowires and nanotubes: Size and shape effects
Sign Up to like & getrecommendations! Published in 2018 at "Nano Energy"
DOI: 10.1016/j.nanoen.2018.01.010
Abstract: Abstract Gallium nitride (GaN) nanowires and nanotubes possess extraordinary device ability of converting wasted energy into harvestable electricity in terms of their piezoelectricity and pyroelectricity. From the perspective of atomic cohesive energy, we present a… read more here.
Keywords: nanowires nanotubes; gan nanowires; piezoelectric pyroelectric; size ... See more keywords
Photoluminescence Properties of GaN Nanowires Grown in a Gradient-Plasma Environment
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c04527
Abstract: Herein，we report the plasma effect on the surface defects of GaN nanowires (NWs). A gradient plasma growth system by microwave plasma chemical vapor deposition is demonstrated for NWs growth. The s... read more here.
Keywords: nanowires grown; properties gan; gan nanowires; photoluminescence properties ... See more keywords
p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements.
Sign Up to like & getrecommendations! Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04560
Abstract: GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was… read more here.
Keywords: nanowires characterized; gan nanowires; type doping; doping gan ... See more keywords
Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates.
Sign Up to like & getrecommendations! Published in 2020 at "ACS nano"
DOI: 10.1021/acsnano.9b09126
Abstract: Growing III-nitride nanowires on 2D materials is advantageous as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as… read more here.
Keywords: quality; epitaxial growth; nucleation layer; gan nanowires ... See more keywords
Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry
Sign Up to like & getrecommendations! Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce00431e
Abstract: We analyze the temporal variation of the substrate optical reflectance during the formation of GaN nanowires in molecular beam epitaxy using transverse electric and transverse magnetic polarized light. The time dependence of the reflectance signal… read more here.
Keywords: nanowires molecular; formation gan; gan nanowires; molecular beam ... See more keywords
Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
Sign Up to like & getrecommendations! Published in 2019 at "CrystEngComm"
DOI: 10.1039/c9ce01151j
Abstract: Process diagram for achieving pure Ga-polar and site-controlled growth of n-GaN nanowires on conductive n-Si-AlN templates using MOVPE. read more here.
Keywords: mask less; gan nanowires; less movpe; site ... See more keywords
First-principles calculations of GaN:Gd nanowires: Carbon-dopants-induced room-temperature ferromagnetism
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.5001473
Abstract: First-principle calculations of the electronic structure and magnetic interaction of C-Gd co-doped GaN nanowires have been performed. The room-temperature ferromagnetism in GaN:Gd nanowires is observed after the substitution of N atoms by C atoms. A… read more here.
Keywords: ferromagnetism; temperature ferromagnetism; gan nanowires; room temperature ... See more keywords