Articles with "gan nws" as a keyword



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Crystallographic orientation control and optical properties of GaN nanowires

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Published in 2018 at "RSC Advances"

DOI: 10.1039/c7ra11408g

Abstract: The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour–liquid–solid hydride vapour phase epitaxy (VLS-HVPE). The… read more here.

Keywords: crystallographic orientation; gan nws; orientation; properties gan ... See more keywords
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Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects.

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Published in 2022 at "Nanoscale"

DOI: 10.1039/d1nr07863a

Abstract: The piezoelectric nanowires (NWs) are considered as promising nanomaterials to develop high-efficient piezoelectric generators. Establishing the relationship between their characteristics and their piezoelectric conversion properties is now essential to further improve the devices. However, due… read more here.

Keywords: schottky nano; nano contact; conversion; charge effects ... See more keywords
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GaN nanowires grown by Halide chemical vapour deposition as photoanode for photo-electrochemical water oxidation reaction.

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Published in 2020 at "Nanotechnology"

DOI: 10.1088/1361-6528/aba211

Abstract: Manifold morphology of GaN nanowires (NWs) are fabricated using Halide chemical vapour deposition (HCVD) on n-Si (111) substrate and demonstrated as promising photoelectrode for photo-electrochemical (PEC) water splitting application. We report, substantial enhancement in photocurrent… read more here.

Keywords: gan nws; water; photoanode; photo electrochemical ... See more keywords
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Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions.

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Published in 2019 at "Optics express"

DOI: 10.1364/oe.27.000a81

Abstract: InGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three… read more here.

Keywords: gan axial; improved solar; solar hydrogen; ingan gan ... See more keywords