Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution
Sign Up to like & getrecommendations! Published in 2021 at "Energies"
DOI: 10.3390/en14144241
Abstract: This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found… read more here.
Keywords: plane; gan plane; crystallographic planes; tmah solution ... See more keywords