Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113454
Abstract: Abstract The paper reports the results of a study based on experimental data and finite element simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in short circuit condition. The study focuses… read more here.
Keywords: operated short; failure; short circuit; gan power ... See more keywords
Post-trench restoration for vertical GaN power devices
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0191454
Abstract: The impact of the post-trench restoration on the electrical characteristics of vertical GaN power devices is systematically investigated in this work. Following the achievement of microtrench-free GaN trench structure with modified dry etching conditions, the… read more here.
Keywords: post trench; vertical gan; gan power; trench restoration ... See more keywords
Effects of substrate termination on R on increase under stress in 650 V GaN power devices
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abf44b
Abstract: Buffer related electron trapping and hot electron injection are responsible for R on degradation in devices, but the effects of substrate termination are still uncertain. In this work, both positive and negative substrate bias are… read more here.
Keywords: effects substrate; substrate termination; increase; electron ... See more keywords
Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abd008
Abstract: GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of… read more here.
Keywords: voltage; power; gan gate; transistor ... See more keywords
A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC–DC Conversion
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Journal of Solid-State Circuits"
DOI: 10.1109/jssc.2022.3201781
Abstract: To unlock the full potential of monolithic gallium nitride (GaN) power integrated circuits, this article explores the feasibility of developing efficient and reliable on-chip gate driving and level shifting solutions, which fundamentally facilitate the on-chip… read more here.
Keywords: gan power; gate driving; level shifting; power ... See more keywords
Amping Up the PA for 5G: Efficient GaN Power Amplifiers with Dynamic Supplies
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Microwave Magazine"
DOI: 10.1109/mmm.2017.2664018
Abstract: Signals designed for high-capacity communications result in high peak-to-average ratio (PAR) waveforms that the transmitter power amplifier (PA) must amplify with low distortion. With emerging fifth-generation (5G) wireless systems, carrier frequencies and signal bandwidths are… read more here.
Keywords: amplifiers dynamic; power amplifiers; amping efficient; power ... See more keywords
Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2684093
Abstract: Simulations of reverse breakdown behavior of GaN power diodes with junction termination extensions (JTEs) are presented. The p-type JTE is located at the edge of the main p-n-junction, and under reverse bias, the charge in… read more here.
Keywords: gan power; junction termination; power diodes; jte ... See more keywords
Stability and Reliability of Lateral GaN Power Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2931718
Abstract: GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications,… read more here.
Keywords: stability reliability; power; field effect; gan power ... See more keywords
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3083239
Abstract: Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive… read more here.
Keywords: power devices; fabrication; power; gan power ... See more keywords
GaN Power Integration Technology and Its Future Prospects
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3341053
Abstract: The planar nature of the GaN heterojunction devices provides extended dimensions for implementing monolithic power integrated circuits. This article presents a comprehensive review of the advancements in GaN power integration. Basic building blocks in a… read more here.
Keywords: gan power; integration technology; power; power integration ... See more keywords
3-D On-Chip Integration of GaN Power Devices on Power Delivery Network (PDN) With Direct Heat Spreading Layer Bonding for Heterogeneous 3-D (H3D) Stacked Systems
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3556044
Abstract: Heterogeneous 3-D (H3D) stacked systems offer numerous advantages for high-performance computing (HPC) and artificial intelligence/machine learning (AI/ML) applications. However, implementing H3D systems requires a re-designed power delivery network (PDN) for efficient power delivery in 3-D… read more here.
Keywords: gan power; tex math; inline formula;