Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113454
Abstract: Abstract The paper reports the results of a study based on experimental data and finite element simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in short circuit condition. The study focuses… read more here.
Keywords: operated short; failure; short circuit; gan power ... See more keywords
Effects of substrate termination on R on increase under stress in 650 V GaN power devices
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abf44b
Abstract: Buffer related electron trapping and hot electron injection are responsible for R on degradation in devices, but the effects of substrate termination are still uncertain. In this work, both positive and negative substrate bias are… read more here.
Keywords: effects substrate; substrate termination; increase; electron ... See more keywords
Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abd008
Abstract: GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of… read more here.
Keywords: voltage; power; gan gate; transistor ... See more keywords
A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC–DC Conversion
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Journal of Solid-State Circuits"
DOI: 10.1109/jssc.2022.3201781
Abstract: To unlock the full potential of monolithic gallium nitride (GaN) power integrated circuits, this article explores the feasibility of developing efficient and reliable on-chip gate driving and level shifting solutions, which fundamentally facilitate the on-chip… read more here.
Keywords: gan power; gate driving; level shifting; power ... See more keywords
Amping Up the PA for 5G: Efficient GaN Power Amplifiers with Dynamic Supplies
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Microwave Magazine"
DOI: 10.1109/mmm.2017.2664018
Abstract: Signals designed for high-capacity communications result in high peak-to-average ratio (PAR) waveforms that the transmitter power amplifier (PA) must amplify with low distortion. With emerging fifth-generation (5G) wireless systems, carrier frequencies and signal bandwidths are… read more here.
Keywords: amplifiers dynamic; power amplifiers; amping efficient; power ... See more keywords
Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2684093
Abstract: Simulations of reverse breakdown behavior of GaN power diodes with junction termination extensions (JTEs) are presented. The p-type JTE is located at the edge of the main p-n-junction, and under reverse bias, the charge in… read more here.
Keywords: gan power; junction termination; power diodes; jte ... See more keywords
Stability and Reliability of Lateral GaN Power Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2931718
Abstract: GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications,… read more here.
Keywords: stability reliability; power; field effect; gan power ... See more keywords
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3083239
Abstract: Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive… read more here.
Keywords: power devices; fabrication; power; gan power ... See more keywords
Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3081485
Abstract: We present backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is described. Two… read more here.
Keywords: testing single; laser testing; laser; backside laser ... See more keywords
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2023.3266365
Abstract: Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture, and physics of many GaN devices are significantly different from silicon and silicon carbide… read more here.
Keywords: stability reliability; gan power; power; reliability ... See more keywords
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091554
Abstract: This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of… read more here.
Keywords: power high; gan power; design; field plate ... See more keywords