Electrical properties of Si-doped GaN prepared using pulsed sputtering
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4975056
Abstract: In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range… read more here.
Keywords: properties doped; doped gan; gan prepared; prepared using ... See more keywords