AlGaN/GaN pressure sensor with a Wheatstone bridge structure
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DOI: 10.1063/1.4996257
Abstract: In this work, a Wheatstone bridge-type pressure sensor based on AlGaN/GaN heterostructure was fabricated for the first time. The pressure sensor consisted of four gateless high electron mobility transistors (HEMTs) on a 585 μm depth… read more here.
Keywords: algan gan; pressure sensor; wheatstone bridge; sensor ... See more keywords