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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.010
Abstract: Abstract We study the cathodoluminescence (CL) and the photoluminescence (PL) properties of In x Ga 1−x N/GaN quantum disks (QDisks) included in nanowires obtained by selective area sublimation from an In x Ga 1−x N/GaN…
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Keywords:
obtained selective;
gan quantum;
properties gan;
quantum disks ... See more keywords
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1
Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4974448
Abstract: The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of wurtzite AlxGa1-xN has been investigated by introducing impurity modes in a modified random-element isodisplacement model. Based on the dielectric continuous model,…
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Keywords:
effects two;
gan quantum;
two mode;
algan gan ... See more keywords
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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5048010
Abstract: Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the…
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Keywords:
quantum;
gan quantum;
source;
ingan gan ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/1.5133965
Abstract: We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature and substrate dependence of the size distributions of droplets and QDs,…
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Keywords:
dot formation;
formation nitridation;
mechanisms gan;
quantum dot ... See more keywords
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2
Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/accaeb
Abstract: Molecular beam epitaxy growth and optical properties of GaN quantum disks in AlN nanowires were investigated, with the purpose of controlling the emission wavelength of AlN nanowire-based light emitting diodes. Besides GaN quantum disks with…
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Keywords:
quantum disks;
aln nanowires;
quantum;
gan quantum ... See more keywords
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Published in 2020 at "Photonics"
DOI: 10.3390/photonics7040087
Abstract: AlGaN-delta-GaN quantum well (QW) structures have been demonstrated to be good candidates for the realization of high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs). However, such heterostructures are still not fully understood. This study focuses on investigation…
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Keywords:
gan quantum;
algan delta;
delta gan;
efficiency ... See more keywords