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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0049473
Abstract: The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities…
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Keywords:
impact interfacial;
gan gan;
power;
contamination ... See more keywords