Articles with "gan regrowth" as a keyword



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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

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Published in 2021 at "Applied Physics Letters"

DOI: 10.1063/5.0049473

Abstract: The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities… read more here.

Keywords: impact interfacial; gan gan; power; contamination ... See more keywords