Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-02224-w
Abstract: An Au/Pr6O11/n-GaN metal/insulator/semiconductor (MIS) junction was prepared with a high-k praseodymium oxide insulator layer and probed its structural, chemical and electrical characteristics by XRD, TEM, XPS, I–V and C–V approaches. XRD, TEM and XPS examinations… read more here.
Keywords: mis junction; gan schottky; pr6o11; insulator ... See more keywords
Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.12.026
Abstract: Abstract We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect… read more here.
Keywords: schottky barrier; gated edge; gan schottky; numerical analysis ... See more keywords
Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106820
Abstract: Abstract In this study, the effect of p-NiO guard ring length on the properties of vertical GaN Schottky barrier diode was investigated extensively. The forward biased current-voltage characteristics of all diodes with different guard ring… read more here.
Keywords: gan schottky; nio guard; guard ring; schottky barrier ... See more keywords
Characterization of Etched and Grown GaN-GaN Schottky Diodes
Sign Up to like & getrecommendations! Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619011930
Abstract: GaN-based devices are of much current interest for high-power electronics due to their superior physical and electrical properties, which include high electric breakdown field, high operation temperature, large band gap, and high electron velocity. GaN… read more here.
Keywords: gan substrates; uid gan; microscopy; schottky diodes ... See more keywords
Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface
Sign Up to like & getrecommendations! Published in 2022 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.1c20352
Abstract: Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal family, has been studied for over a decade, both in terms of fundamental and applied research. Up to now, the spectrum… read more here.
Keywords: study; gan schottky; cer; electronic phenomena ... See more keywords
Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer.
Sign Up to like & getrecommendations! Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b18976
Abstract: Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed due to ammonia precursor etching… read more here.
Keywords: temperature; carbon; carbon doped; gan schottky ... See more keywords
Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab3071
Abstract: The current versus voltage (I-V) characteristics of a Ni/GaN Schottky diode are measured from 50 to 400 K and the temperature dependence of the extracted barrier heights and ideality factors is described as a consequence… read more here.
Keywords: barrier heights; modified log; barrier; gan schottky ... See more keywords
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac0b93
Abstract: In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET)… read more here.
Keywords: schottky barrier; barrier; gan schottky; thin barrier ... See more keywords
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2963902
Abstract: Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after… read more here.
Keywords: gan gan; grown regrown; gan; gan schottky ... See more keywords
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3014133
Abstract: Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates. Devices with different FMR geometries were investigated including various numbers of rings and… read more here.
Keywords: metal; gan schottky; floating metal; schottky barrier ... See more keywords
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3005934
Abstract: This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of $115~\Omega $ /sq. A novel edge termination based on regrown p-GaN is proposed to manage… read more here.
Keywords: algan gan; gan schottky; multi channel; schottky barrier ... See more keywords