Thermal neutron transmutation doping of GaN semiconductors
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DOI: 10.1038/s41598-020-72862-2
Abstract: High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The… read more here.
Keywords: transmutation doping; gan semiconductors; neutron transmutation; doping gan ... See more keywords