A 26‐GHz Low Noise Amplifier With 1.6‐dB Minimum Noise Figure in 0.15‐μm GaN‐on‐SiC Process
Sign Up to like & getrecommendations! Published in 2024 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.70038
Abstract: A 24.8–29.1‐GHz four‐stage gallium nitride (GaN) low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter which is fabricated in a 0.15‐μm GaN‐on‐SiC process. The proposed GaN LNA utilizes gate/drain bypass… read more here.
Keywords: noise figure; gan sic; sic process; low noise ... See more keywords
GaN‐on‐SiC Broadband Driver Amplifier for C‐ and X‐Band Applications
Sign Up to like & getrecommendations! Published in 2025 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.70259
Abstract: A GaN‐on‐SiC‐based broadband driver amplifier operating in the C‐ and X‐bands from 5 to 12 GHz has been demonstrated. The MMIC has a typical small signal gain of 29.7 dB with a ±1.4 dB gain ripple. The input and… read more here.
Keywords: gan sic; gain; output power; ripple ... See more keywords
Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145267
Abstract: Abstract Using the complexes of structural and spectroscopic diagnostic techniques, we investigated the influence of the layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with… read more here.
Keywords: gan layer; layer; sic por; silicon ... See more keywords
Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c16905
Abstract: Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their… read more here.
Keywords: across gan; aln transition; gan sic; transition layers ... See more keywords
Thermophysical property measurement of GaN/SiC, GaN/AlN, and AlN/SiC epitaxial wafers using multi-frequency/spot-size time-domain thermoreflectance
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0245381
Abstract: Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are essential components in modern radio frequency power amplifiers. In order to improve both the device electrical and thermal performance (e.g., higher current density operation and better… read more here.
Keywords: aln sic; gan sic; gan aln; gan ... See more keywords
Enhanced interfacial stability of GaN on SiC through contact orientation and layer tilting
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0276274
Abstract: Gallium nitride (GaN) is typically grown on silicon carbide (SiC) or silicon (Si) substrates to form GaN-on-SiC or GaN-on-Si heterostructures; however, these systems often face fabrication challenges and significant lattice mismatch. Therefore, a comprehensive investigation… read more here.
Keywords: gan sic; stability gan; enhanced interfacial; structural stability ... See more keywords
Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2021.3137908
Abstract: This paper proposes high sensitivity temperature sensors based on single port surface acoustic wave (SAW) devices with GHz resonance frequencies, developed on GaN/SiC and GaN/Sapphire, which permit wide range, accurate temperature determinations. In contrast with… read more here.
Keywords: sapphire; gan sapphire; gan sic; surface acoustic ... See more keywords
A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2714865
Abstract: Silicon carbide (SiC) power devices have been commercialized up to 1.7 kV with operating temperatures up to 573 K. The temperature limitations of SiC devices are generally derived from limitations in packaging and a lack… read more here.
Keywords: high power; temperature; power applications; power ... See more keywords
Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3099247
Abstract: Although the gallium nitride (GaN) high-electron-mobility transistor/silicon carbide (SiC) junction field-effect transistor (JFET) cascode device exhibits certain performance advantages over the SiC metal–oxide–semiconductor field-effect transistor (MOSFET), its robustness in harsh operating conditions is unknown. In… read more here.
Keywords: 650 gan; short circuit; cascode devices; cascode ... See more keywords
Unlocking the Full Potential of GaN/SiC Cascode Device With 3D Co-Packaging and Enhanced dv/dt Control Capability
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2025.3530510
Abstract: To unlock the full fast-switching potential of the GaN-HEMT/SiC-JFET cascode device, parasitic interconnection inductances are minimized with a 3-D stacked co-packaging configuration. This configuration offers the benefits of reduced switching loss and suppressed oscillation. Equipped… read more here.
Keywords: cascode device; gan sic; control; sic cascode ... See more keywords