Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145267
Abstract: Abstract Using the complexes of structural and spectroscopic diagnostic techniques, we investigated the influence of the layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with… read more here.
Keywords: gan layer; layer; sic por; silicon ... See more keywords
Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices
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DOI: 10.1109/access.2021.3137908
Abstract: This paper proposes high sensitivity temperature sensors based on single port surface acoustic wave (SAW) devices with GHz resonance frequencies, developed on GaN/SiC and GaN/Sapphire, which permit wide range, accurate temperature determinations. In contrast with… read more here.
Keywords: sapphire; gan sapphire; gan sic; surface acoustic ... See more keywords
A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications
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DOI: 10.1109/led.2017.2714865
Abstract: Silicon carbide (SiC) power devices have been commercialized up to 1.7 kV with operating temperatures up to 573 K. The temperature limitations of SiC devices are generally derived from limitations in packaging and a lack… read more here.
Keywords: high power; temperature; power applications; power ... See more keywords
Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3099247
Abstract: Although the gallium nitride (GaN) high-electron-mobility transistor/silicon carbide (SiC) junction field-effect transistor (JFET) cascode device exhibits certain performance advantages over the SiC metal–oxide–semiconductor field-effect transistor (MOSFET), its robustness in harsh operating conditions is unknown. In… read more here.
Keywords: 650 gan; short circuit; cascode devices; cascode ... See more keywords