Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.04.014
Abstract: Abstract We have analyzed the in-situ measurements of bow and reflectance during growth of GaN on silicon layers for HEMT based devices, varying the quality of the layers by changing the AlN nucleation layer. By… read more here.
Keywords: stress; growth; gan silicon; dislocation density ... See more keywords
Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines
Sign Up to like & getrecommendations! Published in 2021 at "Applied Sciences"
DOI: 10.3390/app11199017
Abstract: In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent… read more here.
Keywords: gan silicon; low impedance; power; power amplifier ... See more keywords