LAUSR

About LAUSR
Donate
Contact Us

Follow us:

You are not signed in:

Sign Up!


   Articles with "gan silicon" as a keyword



Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth

Sign Up to like & get
recommendations! Published in 2019 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2019.04.014

Abstract: Abstract We have analyzed the in-situ measurements of bow and reflectance during growth of GaN on silicon layers for HEMT based devices, varying the quality of the layers by changing the AlN nucleation layer. By… read more here.

Keywords: stress; growth; gan silicon; dislocation density ... See more keywords

720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth

Sign Up to like & get
recommendations! Published in 2025 at "Journal of Applied Physics"

DOI: 10.1063/5.0299842

Abstract: This work demonstrates, for the first time, avalanche breakdown capability in quasi-vertical gallium nitride (GaN) on silicon (Si) substrates employing localized epitaxial growth. On industry-standard 200 mm wafers, we integrated an 8 μm thick GaN drift layer… read more here.

Keywords: capability; 720 quasi; gan silicon; quasi vertical ... See more keywords

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

Sign Up to like & get
recommendations! Published in 2021 at "Applied Sciences"

DOI: 10.3390/app11199017

Abstract: In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent… read more here.

Keywords: gan silicon; low impedance; power; power amplifier ... See more keywords

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Sign Up to like & get
recommendations! Published in 2024 at "Micromachines"

DOI: 10.3390/mi15091157

Abstract: In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using patterned… read more here.

Keywords: non alloyed; treatment; vertical gan; gan silicon ... See more keywords