Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c02204
Abstract: The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the… read more here.
Keywords: growth; gan single; crystalline; microrod arrays ... See more keywords
Design of a GaN-on-Si Single-Balanced Resistive Mixer for Ka-band Satcom
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2018.2880315
Abstract: Design and performance of a gallium nitride (GaN)-on-Si mixer for the Ka-band satellite telecom applications are presented in this letter. GaN-on-Si offers the advantage of high-volume production even for millimeter-wave applications. A single-balanced architecture is… read more here.
Keywords: single balanced; design gan; mixer band; mixer ... See more keywords
Mechanical Properties of GaN Single Crystals upon C Ion Irradiation: Nanoindentation Analysis
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15031210
Abstract: Mechanical properties of gallium nitride (GaN) single crystals upon carbon ion irradiation are examined using nanoindentation analysis at room temperature. Pop-in events in the load-depth curves are observed for unirradiated and irradiated GaN samples. A… read more here.
Keywords: single crystals; gan single; analysis; mechanical properties ... See more keywords