Radiation-induced defects in the InGaN/GaN superlattice structure
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DOI: 10.1088/1402-4896/ad4794
Abstract: With the molecular dynamics method, this paper investigates radiation-induced defects in the In0.16Ga0.84N/GaN superlattice structure (SLS) and the In0.04Ga0.96N/GaN SLS. In the temporal evolution of cascades, most of vacancies recombine with interstitials. The Monte Carlo… read more here.
Keywords: gan superlattice; induced defects; radiation induced; gan sls ... See more keywords