RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch
Sign Up to like & getrecommendations! Published in 2021 at "International Journal of Microwave and Wireless Technologies"
DOI: 10.1017/s1759078721000076
Abstract: Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration… read more here.
Keywords: characterization; gan soi; spst switch; signal characterization ... See more keywords
Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2878457
Abstract: A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is found to sequentially comprise three ranges of low-field… read more here.
Keywords: 200 gan; leakage; gan soi; vertical leakage ... See more keywords