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Published in 2021 at "International Journal of Microwave and Wireless Technologies"
DOI: 10.1017/s1759078721000076
Abstract: Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration…
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Keywords:
characterization;
gan soi;
spst switch;
signal characterization ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2878457
Abstract: A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is found to sequentially comprise three ranges of low-field…
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Keywords:
200 gan;
leakage;
gan soi;
vertical leakage ... See more keywords