Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
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DOI: 10.1063/5.0249739
Abstract: This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of… read more here.
Keywords: source drain; alxga1 aln; gan source; drain ... See more keywords