Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process
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DOI: 10.1109/jeds.2017.2751065
Abstract: The rapid development of RF power electronics requires amplifier operating at high frequency with high output power. GaN-based HEMTs as RF devices have made continuous progress in the last two decades showing great potential for… read more here.
Keywords: self aligned; gan static; power; induction transistor ... See more keywords