Impact of chloride surface treatment on nano-porous GaN structure for enhanced water-splitting efficiency
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.147465
Abstract: Abstract Photoelectrochemical devices equipped with semiconductor electrodes could be used for economically feasible hydrogen generation from water and sunlight energy. The bottleneck is in designing efficiently operating photoelectrodes, in particular with practical nano-architectures maximizing the… read more here.
Keywords: porous gan; water splitting; gan structure; water ... See more keywords
Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b15344
Abstract: On the basis of the laterally porous GaN, we designed and fabricated a composite porous GaN structure with both well-ordered lateral and vertical holes. Compared to the plane GaN, the composite porous GaN structure with… read more here.
Keywords: composite porous; porous gan; gan structure; water splitting ... See more keywords
High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer
Sign Up to like & getrecommendations! Published in 2017 at "New Journal of Chemistry"
DOI: 10.1039/c7nj01140g
Abstract: Achieving high responsivity for a self-powered ultraviolet (UV) photodetector is challenging. Herein, we report a high responsivity self-powered UV photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer whose responsivity reached as… read more here.
Keywords: cds insert; gan structure; insert layer; structure ... See more keywords
Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5026831
Abstract: Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects… read more here.
Keywords: structure probed; monoenergetic positron; positron beams; gan structure ... See more keywords