Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0038705
Abstract: In this work, a layer of graphene is inserted into Al2O3/recessed gate AlGaN/GaN structures to realize the positive shift of flatband voltage VFB. With a chemically inert surface and a high work function, graphene suppresses… read more here.
Keywords: gan structures; recessed gate; algan gan; gate ... See more keywords
Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16093424
Abstract: Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects… read more here.
Keywords: luminescence characteristics; characteristics mocvd; intensity; gan structures ... See more keywords