Morphological study of InGaN on GaN substrate by supersaturation
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.12.028
Abstract: Abstract The morphology of thin InGaN layers grown on c-plane GaN substrates by metalorganic vapor phase epitaxy (MOVPE) has been studied by atomic force microscopy. Three different morphologies appeared, a stepped surface, large flat two-dimensional… read more here.
Keywords: morphological study; study ingan; supersaturation; gan substrate ... See more keywords
Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125462
Abstract: Abstract Reducing the thermal stress induced in GaN crystals is key for the fabrication of large-diameter GaN crystals. In the Na-flux method, thermal stress is eliminated by sapphire dissolution at growth temperature after growth. We… read more here.
Keywords: dissolution; sapphire; freestanding gan; dissolution sapphire ... See more keywords
Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.07.029
Abstract: Abstract A new process for producing a freestanding patterned polycrystalline GaN substrate by applying a straightforward and affordable technique is presented here. Such substrate was fabricated by depositing ~ 50 µm thick bulk GaN layer on porous… read more here.
Keywords: porous substrate; freestanding patterned; polycrystalline gan; patterned polycrystalline ... See more keywords
Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105203
Abstract: Abstract Samples comprising 1.3 μm-thick C-doped semi-insulating (SI) GaN layer sandwiched between two n-GaN layers were grown on sapphire or conductive GaN substrates by metal-organic chemical vapor phase epitaxy at varied reactor pressure between 100 and… read more here.
Keywords: mbar; gan substrate; grown gan; pressure ... See more keywords
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.01.012
Abstract: Abstract In this study, n-InGaN and u-InGaN are proposed to be the lower waveguide (LWG) and quantum barrier (QB), respectively, to eliminate the leakage of optical field to GaN substrate in GaN-based green laser diode… read more here.
Keywords: optical field; based green; gan based; field ... See more keywords
The structure and superconductivity of ultrathin Ga films on GaN substrate: A first-principles calculations
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5039825
Abstract: A free-standing ultrathin Ga film with hexagonal symmetry is unstable due to its incompatibility with the chemical aromatic rule. Recently, two or three monolayers Ga films have been grown on GaN substrate and exhibit superconductivity… read more here.
Keywords: films gan; film; ultrathin films; gan substrate ... See more keywords
Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0066263
Abstract: A record-long room-temperature photoluminescence (PL) lifetime ( τPLRT) of approximately 70 ps was obtained for the sub-bandgap 3.7 eV emission band of a 300-nm-thick c-plane Al0.83In0.17N epilayer for the use in cladding layers of an edge… read more here.
Keywords: metalorganic vapor; al0 83in0; vapor phase; 83in0 17n ... See more keywords
First Experimental Realization of a p-FET Based on Single Crystal GaN Substrate
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2025.3595206
Abstract: In this study, we report the first p-type channel field-effect transistors (p-FETs) fabricated on single crystal GaN substrate. The p-GaN/u-GaN/AlN/AlGaN structure on GaN substrate exhibits excellent crystal quality and interface. Due to the decrease of… read more here.
Keywords: fet; gan substrate; crystal gan; single crystal ... See more keywords
Improvement in environmental stability and photoluminescence of CH3NH3PbI3 film through Br-doping and nanoporous GaN substrate
Sign Up to like & getrecommendations! Published in 2025 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/adad9c
Abstract: As a new type of solar cell material that has attracted much attention, how to improve the environmental stability and photoluminescence property of organic-inorganic hybrid perovskite materials for large-scale commercial applications is a core issue.… read more here.
Keywords: gan substrate; environmental stability; nanoporous gan; photoluminescence ... See more keywords
Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12030478
Abstract: Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation… read more here.
Keywords: gan stripes; growth; gan substrate; behaviors gan ... See more keywords