Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125575
Abstract: Abstract We report reducing the density of threading dislocations (TDs) in stacking-fault-free semipolar (20 2 ¯ 1 ) GaN grown on sapphire by inserting an AlGaN/GaN superlattice (SL). We have studied the influence of AlGaN/GaN… read more here.
Keywords: gan superlattice; algan gan; emitting diodes; light emitting ... See more keywords