Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.11.020
Abstract: Abstract The nonpolar a-plane p-AlxGa1-xN/GaN superlattices (SLs) were successfully grown with metal organic chemical vapor deposition technology. The surface morphology, carrier concentration, layer thickness, and Al composition for the nonpolar a-plane p-AlxGa1-xN/GaN SLs were characterized… read more here.
Keywords: plane; nonpolar plane; alxga1 gan; gan superlattices ... See more keywords
Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.05.012
Abstract: Abstract The nonpolar a-plane Mg-delta-doped Al0.6Ga0.4N/GaN superlattices (SLs) with enhanced hole concentration were successfully grown by using indium (In)-surfactant with metal organic chemical vapor deposition (MOCVD) technology. The effect of In-surfactant on the characteristics of… read more here.
Keywords: microscopy; nonpolar plane; gan superlattices; concentration ... See more keywords
Structural optimization of lattice-matched Sc0.14Al0.86N/GaN superlattices for photonic applications
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0289800
Abstract: ScxAl1−xN is an emerging III-nitride material known for its high piezoelectric coefficient and ferroelectric properties. Integration of wide-bandgap ScxAl1−xN with GaN is particularly attractive for quantum photonic devices. Achieving low defect complex multilayers incorporating ScxAl1−xN,… read more here.
Keywords: lattice matching; scxal1 gan; optimization lattice; gan superlattices ... See more keywords