Formation and Applications in Electronic Devices of LatticeâAligned Gallium Oxynitride Nanolayer on Gallium Nitride (Adv. Mater. 12/2023)
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202208960
Abstract: Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN-based devices,… read more here.
Keywords: gan surface; gallium nitride; gallium; gallium oxynitride ... See more keywords
Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c03094
Abstract: Gallium nitride (GaN) has been considered one of the most promising materials for the next-generation power and radio-frequency electronic devices, as they can operate at higher voltage, higher frequency, and higher temperature, compared with their… read more here.
Keywords: electronic devices; gan based; gan surface; high temperature ... See more keywords
Influence of GaN Surface Fermi Level Position on Carrier Transfer across MAPbI3/GaN Interface
Sign Up to like & getrecommendations! Published in 2023 at "Physical Chemistry Chemical Physics"
DOI: 10.1039/d3cp00801k
Abstract: Gallium nitride (GaN) and hybrid organic-inorganic perovskites such as methylammonium lead iodide (MAPbI3) have both significantly influenced the modern optoelectronics. Both marked a new beginning in the development of important... read more here.
Keywords: fermi level; surface fermi; gan surface; level position ... See more keywords
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5048010
Abstract: Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the… read more here.
Keywords: quantum; gan quantum; source; ingan gan ... See more keywords