High reactivity of H2O vapor on GaN surfaces
Sign Up to like & getrecommendations! Published in 2022 at "Science and Technology of Advanced Materials"
DOI: 10.1080/14686996.2022.2052180
Abstract: ABSTRACT Understanding the process of oxidation on the surface of GaN is important for improving metal-oxide-semiconductor (MOS) devices. Real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation… read more here.
Keywords: oxidation; gan surfaces; h2o vapor; surface ... See more keywords