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Published in 2019 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2904243
Abstract: Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a promising technology for high-efficiency and high-power density applications. In this paper, a stacked three-port three-level converter (STPTLC) using GaN switches is proposed for interfacing the renewable…
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Keywords:
converter;
using gan;
phase shift;
gan switches ... See more keywords