Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method
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DOI: 10.1109/ted.2020.3015466
Abstract: A new differential method for accurate extraction of electrical parameters of high-electron mobility transistor (HEMT) devices for gallium nitride (GaN) technology is proposed. This method, presented here for the first time, is used to study… read more here.
Keywords: hemt; differential method; new differential; method ... See more keywords