Investigation of the Root Causes of Electromagnetic Noise of an Interleaved DC–DC Converter With GaN or Si Transistors and Corresponding Optimization Strategies
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2917067
Abstract: The proposed paper unveils various sources of conducted and radiated electromagnetic interferences (EMIs) of an interleaved dc–dc converter with gallium nitride (GaN) transistors and describes different optimization strategies. Instead of striving to achieve conformity to… read more here.
Keywords: interleaved converter; optimization strategies; gan transistors; emi ... See more keywords
TID Characterization of COTS HEMT GaN Transistors: An In Situ Study of Static and Dynamic Parameters up to 100 krad of Co-60 Gamma Radiation
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DOI: 10.1109/ted.2025.3617030
Abstract: Gallium nitride (GaN) technology has emerged as a transformative solution in the semiconductor industry due to its exceptional performance in high-power and high-frequency applications. With its inherent radiation resilience, GaN is particularly suited for environments… read more here.
Keywords: radiation; static dynamic; dynamic parameters; 100 krad ... See more keywords
An Improved Gate-Boosting Gate Driver for Ultrafast Switching of GaN Transistors for Nanosecond Pulse Generation
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DOI: 10.1109/tps.2025.3555739
Abstract: Gallium nitride high-electron mobility transistors (GaN HEMTs) offer ultrafast switching capabilities because of their compact physical structure, resulting in smaller parasitic components and a lower gate charge requirement. This fast switching capability enables the utilization… read more here.
Keywords: text; gate driver; mathrm; gate ... See more keywords