Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V
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DOI: 10.7567/apex.10.121002
Abstract: In this paper, we report on a vertical GaN trench MOS barrier Schottky (TMBS) rectifier for attaining low leakage current at high temperature and high reverse voltage. At 200 °C, a high blocking voltage of… read more here.
Keywords: voltage; vertical gan; blocking voltage; gan trench ... See more keywords