Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy
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DOI: 10.7567/1882-0786/aafca8
Abstract: We have systematically investigated acceptor (Mg) and donor (Si) profiles at GaN tunnel junction interfaces with the aim of a low resistivity under reverse bias. We found that an overlap between Mg and Si at… read more here.
Keywords: tunnel; phase epitaxy; metalorganic vapor; gan tunnel ... See more keywords