LAUSR

Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes

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1 Published in 2021 at "Microscopy and Microanalysis"

DOI: 10.1017/s1431927621006449

Abstract: Wide bandgap semiconductors, particularly gallium-nitride (GaN) based devices, are of great interest for high-power electronics because of superior material properties such as wide bandgap (3.44 eV), high thermal conductivity (~1.5 x Si), high critical electric… read more here.

Keywords: effect substrate; gan gan; substrate morphology; gan vertical ... See more keywords

Leakage and breakdown mechanisms of GaN vertical power FinFETs

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1 Published in 2019 at "Applied Physics Letters"

DOI: 10.1063/1.5092433

Abstract: This work studies the leakage and breakdown mechanisms of 1.2 kV GaN vertical power FinFETs with edge termination. Two competing leakage and breakdown mechanisms have been identified. The first mechanism is dominated by the electric field,… read more here.

Keywords: barrier; mechanism; gan vertical; power ... See more keywords

Nanofabrication of normally-off GaN vertical nanowire MESFETs.

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0 Published in 2019 at "Nanotechnology"

DOI: 10.1088/1361-6528/ab13d0

Abstract: Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a… read more here.

Keywords: normally gan; nanofabrication normally; gan vertical; nanowire ... See more keywords

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

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1 Published in 2017 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2017.2670925

Abstract: This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers are needed, while no material regrowth or p-GaN layer… read more here.

Keywords: gan substrates; gan vertical; vertical fin; bulk gan ... See more keywords

GaN Vertical Transistors with Staircase Channels for High-Voltage Applications

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1 Published in 2023 at "Materials"

DOI: 10.3390/ma16020582

Abstract: In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase… read more here.

Keywords: channels high; gan vertical; transistors staircase; voltage ... See more keywords