Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
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DOI: 10.1016/j.jcrysgro.2020.125643
Abstract: Abstract Lattice bow generated by 40 µm thick HVPE homoepitaxial layers on commercial free-standing, ammonothermal and HVPE GaN wafers was studied. While a change in lattice bow was measured for all wafers, the additional bow on… read more here.
Keywords: bow; gan wafers; lattice bow; bow thick ... See more keywords