Sign Up to like & get
recommendations!
1
Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08614-9
Abstract: A band anticrossing (BAC) k.p model was applied to calculate the valence band structure of wurtzite GaN1−xSbx dilute alloys. BAC parameters such as localized Sb-impurity energy level and coupling parameter were determined by using experimental…
read more here.
Keywords:
dilute;
band;
gan1 xsbx;
impurity ... See more keywords