Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence.
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DOI: 10.1088/1361-6528/ab2cdb
Abstract: Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with the low N… read more here.
Keywords: ganasp nanowires; content ganasp; increasing content; structural defects ... See more keywords