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GaNP-based photovoltaic device integrated on Si substrate

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1 Published in 2020 at "Solar Energy Materials and Solar Cells"

DOI: 10.1016/j.solmat.2019.110282

Abstract: Abstract Gallium phosphide is an important material in terms of III-V semiconductors integration on Si. In this work we study photovoltaic properties of GaP:Be/GaNP (Eg ~ 2.0eV)/GaP:Si p-i-n heterostructure grown on Si (100) with GaP buffer by… read more here.

Keywords: gap; ganp based; device integrated; based photovoltaic ... See more keywords