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Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.043
Abstract: The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail…
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Keywords:
band gap;
density states;
gap density;
density ... See more keywords