Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy
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DOI: 10.1016/j.apsusc.2019.01.103
Abstract: Abstract The surface and interface properties of III–V semiconductor heterostructures are of extreme importance for increasing the efficiency of multijunction solar cells. However, presence of surface and interface states, deteriorate the performance of the devices… read more here.
Keywords: surface; spectroscopy; gap gaas; gaas ... See more keywords