Synthesis and structural characterization of microcrystalline Ga2S3 layers on a GaP semiconductor substrate
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.01.029
Abstract: Abstract Gallium sulfide (Ga2S3) belongs to a group of wide bandgap semiconductors with interesting properties for infrared and nonlinear optics applications. Recent interest in Ga2S3 material focuses on the passivation of various semiconductor surfaces to… read more here.
Keywords: ga2s3 layers; microscopy; semiconductor; gap semiconductor ... See more keywords
Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6
Sign Up to like & getrecommendations! Published in 2018 at "Chemistry of Materials"
DOI: 10.1021/acs.chemmater.8b02030
Abstract: The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying… read more here.
Keywords: semiconductor csbi4te6; superconductivity; narrow gap; csbi4te6 ... See more keywords
Confined Monolayer Ag As a Large Gap 2D Semiconductor and Its Momentum Resolved Excited States.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c02501
Abstract: 2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also… read more here.
Keywords: gap semiconductor; momentum resolved; large gap;
Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase.
Sign Up to like & getrecommendations! Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04196
Abstract: Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search… read more here.
Keywords: band gap; graphene; incommensurate; wide band ... See more keywords
BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor.
Sign Up to like & getrecommendations! Published in 2017 at "Physical review letters"
DOI: 10.1103/physrevlett.118.146601
Abstract: Large-volume, phase-pure synthesis of BC8 silicon (Ia3[over ¯], cI16) has enabled bulk measurements of optical, electronic, and thermal properties. Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct… read more here.
Keywords: gap; silicon iii; bc8 silicon; iii narrow ... See more keywords
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619050026
Abstract: Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can… read more here.
Keywords: indirect gap; gap semiconductor; type indirect; semiconductor heterostructures ... See more keywords