To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
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DOI: 10.1134/s1064226918090103
Abstract: A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such structures are used in the development of avalanche photodiodes with separate absorption and multiplication regions… read more here.
Keywords: direct gap; based direct; heterostructure based; avalanche photodiodes ... See more keywords