Compensation effects on hole transport in C-doped p-type GaPN dilute nitrides
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DOI: 10.1063/5.0043001
Abstract: Experimental studies of transport in GaPN dilute nitrides have evidenced low hole mobilities, which limit their applications in optoelectronics. Theoretical work to date has not explained the origin of such low hole mobilities. Here, we… read more here.
Keywords: hole transport; dilute nitrides; compensation; gapn dilute ... See more keywords