Articles with "gasb" as a keyword



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Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films

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Published in 2018 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2018.01.329

Abstract: Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III… read more here.

Keywords: thin films; gasb; content; molecular beam ... See more keywords
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Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2016.12.029

Abstract: Abstract The growth of in plane highly mismatched GaSb nanotemplates free of threading dislocations on GaAs (001) substrate is demonstrated using selective area growth. We report a detailed comparison of the crystalline quality of GaSb… read more here.

Keywords: gasb; dislocation; gasb nanotemplates; growth ... See more keywords
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Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates

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Published in 2018 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2018.05.023

Abstract: Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The… read more here.

Keywords: gasb; epitaxial gasb; semi insulating; hall characterization ... See more keywords
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Thermal stability of phase change GaSb\GeTe, SnSe\GeTe and GaSb\SnSe double stacked films revealed by X-ray reflectometry and X-ray diffraction

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Published in 2018 at "Journal of Non-crystalline Solids"

DOI: 10.1016/j.jnoncrysol.2018.02.033

Abstract: Abstract We report a study related to the influence of heat treatment (up to 300 °C) on the structure of GaSb\GeTe, SnSe\GeTe and GaSb\SnSe stacked phase change memory films and of their counterparts with Hf thin… read more here.

Keywords: gete snse; gasb; snse gete; gasb gete ... See more keywords
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Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice.

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Published in 2017 at "Micron"

DOI: 10.1016/j.micron.2016.10.003

Abstract: We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution imaging and advanced image processing. Atomic column positions in InAs and GaSb… read more here.

Keywords: lattice strain; gasb; sub lattice; inas gasb ... See more keywords
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Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications

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Published in 2021 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2021.105965

Abstract: Abstract Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too… read more here.

Keywords: phase change; memory; gasb; stoichiometric gasb ... See more keywords
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Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

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Published in 2018 at "Solar Energy Materials and Solar Cells"

DOI: 10.1016/j.solmat.2018.07.028

Abstract: Abstract Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on… read more here.

Keywords: open circuit; pressure; gasb; circuit voltage ... See more keywords
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Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

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Published in 2019 at "Solar Energy Materials and Solar Cells"

DOI: 10.1016/j.solmat.2019.110042

Abstract: Abstract The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a… read more here.

Keywords: gasb; solar cells; 50ga0 50as0; 50as0 04sb0 ... See more keywords
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Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

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Published in 2023 at "ACS Applied Materials & Interfaces"

DOI: 10.1021/acsami.2c19292

Abstract: Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms… read more here.

Keywords: sample; inas gasb; type superlattices; gasb ... See more keywords
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Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

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Published in 2019 at "Journal of Applied Physics"

DOI: 10.1063/1.5094159

Abstract: To determine the band alignment at the GaSb1-xBix/GaSb interface, a set of GaSb1-xBix/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi ≤ 12%) were grown by molecular beam epitaxy and investigated by… read more here.

Keywords: gasb1 xbix; band; gasb; xbix gasb ... See more keywords
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Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

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Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0140992

Abstract: In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si… read more here.

Keywords: density; axis 001; epitaxial gasb; 001 low ... See more keywords