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Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.01.329
Abstract: Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III…
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Keywords:
thin films;
gasb;
content;
molecular beam ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.12.029
Abstract: Abstract The growth of in plane highly mismatched GaSb nanotemplates free of threading dislocations on GaAs (001) substrate is demonstrated using selective area growth. We report a detailed comparison of the crystalline quality of GaSb…
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Keywords:
gasb;
dislocation;
gasb nanotemplates;
growth ... See more keywords
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Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.05.023
Abstract: Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The…
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Keywords:
gasb;
epitaxial gasb;
semi insulating;
hall characterization ... See more keywords
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Published in 2018 at "Journal of Non-crystalline Solids"
DOI: 10.1016/j.jnoncrysol.2018.02.033
Abstract: Abstract We report a study related to the influence of heat treatment (up to 300 °C) on the structure of GaSb\GeTe, SnSe\GeTe and GaSb\SnSe stacked phase change memory films and of their counterparts with Hf thin…
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Keywords:
gete snse;
gasb;
snse gete;
gasb gete ... See more keywords
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Published in 2017 at "Micron"
DOI: 10.1016/j.micron.2016.10.003
Abstract: We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution imaging and advanced image processing. Atomic column positions in InAs and GaSb…
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Keywords:
lattice strain;
gasb;
sub lattice;
inas gasb ... See more keywords
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Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2021.105965
Abstract: Abstract Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too…
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Keywords:
phase change;
memory;
gasb;
stoichiometric gasb ... See more keywords
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Published in 2018 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2018.07.028
Abstract: Abstract Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on…
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Keywords:
open circuit;
pressure;
gasb;
circuit voltage ... See more keywords
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1
Published in 2019 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2019.110042
Abstract: Abstract The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a…
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Keywords:
gasb;
solar cells;
50ga0 50as0;
50as0 04sb0 ... See more keywords
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Published in 2023 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.2c19292
Abstract: Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms…
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Keywords:
sample;
inas gasb;
type superlattices;
gasb ... See more keywords
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Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5094159
Abstract: To determine the band alignment at the GaSb1-xBix/GaSb interface, a set of GaSb1-xBix/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi ≤ 12%) were grown by molecular beam epitaxy and investigated by…
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Keywords:
gasb1 xbix;
band;
gasb;
xbix gasb ... See more keywords
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0140992
Abstract: In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si…
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Keywords:
density;
axis 001;
epitaxial gasb;
001 low ... See more keywords