High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls
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DOI: 10.1109/ted.2021.3086086
Abstract: InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm2 are demonstrated. Negative differential resistance (NDR) is achieved from 300 to 4 K, showing that band-to-band tunneling (BTBT) is the dominant transport… read more here.
Keywords: gasb heterojunction; inas gasb; band; esaki diodes ... See more keywords