Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07398-x
Abstract: The highest performance of interband cascade detectors optimized for the longwave range of infrared radiation is investigated in this work to include decisive electric gain contribution. Presently, AIIIBV-type-II superlattice systems exhibit short carrier lifetimes limited… read more here.
Keywords: inas gasb; carrier; gasb inas; performance ... See more keywords
Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.02.009
Abstract: Abstract Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface… read more here.
Keywords: oxygen; surface; ion bombardment; ion ... See more keywords
Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1-xSb Quantum Wells.
Sign Up to like & getrecommendations! Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.9b05611
Abstract: Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/InxGa1-xSb quantum wells (QWs), which are platforms of two-dimensional topological insulator (2D-TI), clearly… read more here.
Keywords: inas gasb; edge states; inxga1 xsb; gasb inas ... See more keywords
Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4993894
Abstract: We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers… read more here.
Keywords: inas gainsb; persistent photoconductivity; inas gasb; gasb inas ... See more keywords
Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2018.2887277
Abstract: This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as… read more here.
Keywords: gasb inas; around biotunnel; gate; model gasb ... See more keywords
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618040115
Abstract: Abstractn-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the… read more here.
Keywords: gasb; heterostructure single; inas gasb; gasb heterostructure ... See more keywords