Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
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DOI: 10.1016/j.jcrysgro.2016.12.029
Abstract: Abstract The growth of in plane highly mismatched GaSb nanotemplates free of threading dislocations on GaAs (001) substrate is demonstrated using selective area growth. We report a detailed comparison of the crystalline quality of GaSb… read more here.
Keywords: gasb; dislocation; gasb nanotemplates; growth ... See more keywords