Gate-tunable electronic transport in p -type GaSb quantum wells
Sign Up to like & getrecommendations! Published in 2019 at "Physical Review B"
DOI: 10.1103/physrevb.99.115435
Abstract: We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit… read more here.
Keywords: gate tunable; gasb quantum; quantum wells; transport ... See more keywords
Anomalous de Haas-van Alphen Effect in InAs/GaSb Quantum Wells.
Sign Up to like & getrecommendations! Published in 2017 at "Physical review letters"
DOI: 10.1103/physrevlett.118.176801
Abstract: The de Haas-van Alphen effect describes the periodic oscillation of the magnetization in a material as a function of an inverse applied magnetic field. It forms the basis of a well established procedure for measuring… read more here.
Keywords: quantum wells; inas gasb; alphen effect; haas van ... See more keywords