Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Physics B"
DOI: 10.1088/1674-1056/28/5/057102
Abstract: Te-doped GaSb single crystal grown by the liquid encapsulated Czochralski (LEC) method exhibits a lag of compensating progress and a maximum carrier concentration around 8×1017 cm−3. The reason for this phenomenon has been investigated by… read more here.
Keywords: gasb single; single crystal; electron concentration; free electron ... See more keywords
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/40/4/042101
Abstract: Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb… read more here.
Keywords: gasb single; gasb; lightly doped; acceptor defects ... See more keywords