Thermal Field Optimization Through Numerical Simulation for the Growth of High Quality GaSb Single Crystal
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DOI: 10.1002/crat.202500041
Abstract: As an important III–V semiconductor material for infrared applications, gallium antimonide (GaSb) single crystals require high quality with excellent lattice perfection, making it necessary to establish an ideal thermal field during the liquid encapsulated Czochralski… read more here.
Keywords: gasb single; high quality; thermal field; growth ... See more keywords
Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal
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DOI: 10.1088/1674-1056/28/5/057102
Abstract: Te-doped GaSb single crystal grown by the liquid encapsulated Czochralski (LEC) method exhibits a lag of compensating progress and a maximum carrier concentration around 8×1017 cm−3. The reason for this phenomenon has been investigated by… read more here.
Keywords: gasb single; single crystal; electron concentration; free electron ... See more keywords
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/40/4/042101
Abstract: Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb… read more here.
Keywords: gasb single; gasb; lightly doped; acceptor defects ... See more keywords